Berlin 2012 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 38: Photovoltaics: CIGS and related Materials
HL 38.5: Vortrag
Dienstag, 27. März 2012, 12:15–12:30, ER 270
The influence of CdS buffer layer thickness on low-temperature deposited Cu(In,Ga)Se2 solar cells — •Stefan Puttnins1,2, Thomas Unold3, Philipp Krüger1, Felix Daume1,2, Karsten Pelz1, Andreas Rahm1, and Marius Grundmann2 — 1Solarion AG, Ostende 5, 04288, Leipzig, Germany — 2Institut für Experimentelle Physik II, Universität Leipzig, Linnéstraße 5, 04103 Leipzig, Germany — 3Helmholtz Zentrum Berlin für Materialien und Energie, Hahn Meitner Platz 1, 14109 Berlin, Germany
An additional n-type layer between p-type Cu(In,Ga)Se2 (CIGSe) absorber and n-type ZnO:Al transparent front contact is needed for highly efficient CIGSe solar cells. A CdS layer deposited in a wet chemical bath processes is commonly used for this so called buffer layer.
In this work we analyze the influence of the deposition time and therefore thickness of this CdS buffer in respect to solar cell performance via current-voltage, quantum efficiency (QE) and time resolved photoluminescence (TRPL) measurements.
Thicker buffer layers lead to higher open circuit voltages (VOC), higher shunt resistances, current losses in the QE range of 400-600 nm wavelength and concurrently current gains in the range of 800-1100 nm. This current gain and the increase of VOC can be correlated to an increase in carrier lifetime measured via TRPL.