Berlin 2012 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 38: Photovoltaics: CIGS and related Materials
HL 38.6: Vortrag
Dienstag, 27. März 2012, 12:30–12:45, ER 270
Capacitance-spectroscopical investigations of the influence of buffer layers on defect generation in CIGS solar cells — •Robert Karsthof1,2, Stefan Puttnins1,2, Karsten Pelz1, Matthias Schmidt2, and Marius Grundmann2 — 1Solarion AG, Ostende 5, D-04288 Leipzig — 2University of Leipzig, Institute for Experimental Physics II, Linnéstraße 5, D-04103 Leipzig
The beneficial effect of the presence of buffer layers in Cu(In,Ga)Se2 (CIGS) thin film solar cells on the cell performance has already been confirmed in numerous investigations. Nevertheless, the influence of certain deposition parameters of these layers (implemented at the Solarion AG by a cadmium sufide and an intrinsic zinc oxide layer) on device properties like defect generation at the buffer/absorber or window/buffer interface as well as energetical and spatial distribution of buffer-induced defects is not fully understood yet. In this work ZnO:Al/i-ZnO/CdS/CIGS/Mo/polyimide(PI) solar cells were investigated and the influence of a variation of the sputtering power during the i-ZnO process was analysed. The used methods were thermal admittance spectroscopy (TAS), capacitance-voltage (CV) and photocapacitance (PCap) measurements as well as CV spectroscopy with additional optical excitation (OCV). From the latter doping profiles of single defect species can be obtained.