Berlin 2012 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 4: GaN: Preparation and Characterization I (mainly Optics)

HL 4.4: Vortrag

Montag, 26. März 2012, 10:15–10:30, EW 201

Optical Investigation of Mg-doped AlGaN layers — •Sarah Osterburg¹, Martin Feneberg¹, María Fátima Romero¹, Bernd Garke¹, Jianchang Yan², Jianping Zeng², Junxi Wang², and Rüdiger Goldhahn¹ — ¹Otto-von-Guericke-Universität Magdeburg, Institut für Experimentelle Physik, Abteilung für Materialphysik, Deutschland — ²Semiconductor Lighting R&D Center, Institute of Semiconductors, Chinese Academy of Sciences. P.O. Box 912. Beijing 100083, P.R.China

The emission and absorption features of Al-rich Mg-doped Al_xGa_1−xN films (0.58 ≤ x≤ 0.735) around the band edge were determined by different experimental techniques. We employed Photoluminescence (PL), synchrotron-based Photoluminescence Excitation Spectroscopy, synchrotron-based Spectroscopic Ellipsometry (SSE) and conventional Spectroscopic Ellipsometry at several temperatures between 5  K and room temperature. The data were compared to get a detailed view about the interband transitions taking place in the range from 4  eV to 6  eV. We analyze the Stokes shift of the different samples and clarify the influence of statistical alloy fluctuations on carrier localization.