Berlin 2012 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 43: Poster Session: Quantum Dots and Wires - Preparation and Characterization / Devices (incl. Laser) / Ultrafast Phenomena
HL 43.4: Poster
Dienstag, 27. März 2012, 09:30–12:30, Poster D
Strain in GaAs / InAs core-shell nanowire heterostructures grown on GaAs — •Andreas Biermanns1, Torsten Rieger2,3, Anton Davydok1, Mihail Ion Lepsa2,3, and Ullrich Pietsch1 — 1Universität Siegen, Festkörperphysik, Germany — 2Peter Grünberg Institut-9, Forschungszentrum Jülich, Germany — 3JARA-Fundamentals of Future Information Technology
The growth of semiconductor nanowires (NWs) has attracted significant interest in recent years due to the possible fabrication of novel semiconductor devices for future electronic and opto-electronic applications. Compared to planar heterostructures, the nanowire approach offers an advantage regarding the possibility to form heterostructures between highly lattice mismatched systems, because the free surface of the nanowires allows to relieve the strain more efficiently. One particular way to form heterostructures in the NW geometry, is the fabrication of core-shell devices, in which a NW core is surrounded by a shell of different material. The understanding of the mutual strain between core and shell, as well as the relaxation behavior of the system are crucial for the fabrication of functional devices. In this contribution we report on first x-ray diffraction measurements of GaAs-core / InAs-shell nanowires grown on GaAs (111) by molecular beam epitaxy. Using symmetric - and grazing-incidence x-ray diffraction, the relaxation state of the InAs shell as well as the strain in the GaAs core are measured as function of the InAs shell thickness, showing a gradual relaxation behavior of the shell.