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HL: Fachverband Halbleiterphysik
HL 44: Poster Session: Quantum Dots and Wires - Transport & Optical Properties
HL 44.7: Poster
Tuesday, March 27, 2012, 09:30–12:30, Poster D
Electronic characterization of single GaN nanowires — •Markus Schäfer1, Christian Länger1, Pascal Hille1, Florian Furtmayr1,2, and Martin Eickoff1 — 1I. Physikalisches Institut, Justus-Liebig-Universität Gießen, D-35392 Gießen, Germany — 2Walter Schottky Institut, Technische Universität München, D-85748 Garching, Germany
Semiconductor nanowires (NWs), and in particular wide-bandgap GaN NWs are promising candidates for nanoscale (opto)-electronic devices with a high integration density such as NW transistor structures. In this context it is important to systematically study the electronic properties of single GaN NWs with different doping levels. For this purpose NWs doped with different concentrations of silicon were grwon by plasma assisted molecular beam epitaxy on silicon (111) substrates and electrically contacted by electron beam lithography. We report on the preparation of samples with contacted single n-type GaN NWs and their electronic properties. We present results of conductivity, photocurrent and thermoelectric measurements.