Berlin 2012 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 48: Focus Session: Spintronics (jointly with MA)
HL 48.2: Vortrag
Mittwoch, 28. März 2012, 10:15–10:30, EW 201
Coherent spin states of vacancy defects in silicon carbide — •Sang-Yun Lee1, Yuki Doi2, Shuta Mori2, Takaaki Shimooka2, Torsten Rendler1, Nan Zhao1, Helmut Fedder1, Singi Miwa2, Yoshishige Suzuki2, Norikazu Mizuochi2, and Jörg Wrachtrup1 — 1University of Stuttgart, Stuttgart, Germany — 2Osaka University, Osaka, Japan
Since the first demonstration of the single spin detection of vacancy defects in diamond, the electron spins in the carbon vacancy defects have been considered as a good candidate for the semiconductor qubit especially due to their long coherence time at room temperature. It has been believed that this outstanding property originates from its highly localized bound state deep in the bandgap which prevent spin states from being affected by various decoherence sources [1]. Similarly isolated states can be found in various wide bandgap semiconductors. Among them, the long coherence time (T2≃ 40 µ s at R.T.) of electron spin ensemble of divacancy defect states in the silicon carbide (SiC) has been reported recently [2]. We hereby report our recent results on coherent spin states of various silicon vacancy defects including divacancy defects and other vacancy-related defects in SiC. The optical transitions are used to observe the electron spin resonance from them at room temperature. The coherence times of those defect states at room and low temperatures will be presented, and discussion about the decoherence processes will be given.
[1] J. R. Weber, et al., P. NATL. ACAD. SCI. USA 107, 8513 (2010)
[2] W. F. Koehl, et al., Nature 479, 84 (2011)