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Berlin 2012 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 52: Organic Electronics and Photovoltaics: Electronic Properties I (jointly with DS, CPP, O)

HL 52.6: Vortrag

Mittwoch, 28. März 2012, 10:45–11:00, H 2032

Agglomeration of MoO3 doped into organic thin films studied by TEM-spectroscopy and Tomography — •Daniela Donhauser1, 2, Katrin Schultheiss1, 2, Levin Dieterle1, 2, Martin Pfannmöller3, Rasmus R. Schröder3, Tobias Glaser4,2, Bernd Lunkenheimer5,2, Michael Kröger1, 2, and Wolfgang Kowalsky1, 21Institut für Hochfrequenztechnik, Technische Universität Braunschweig — 2InnovationLab GmbH, Heidelberg — 3CellNetworks, Universität Heidelberg — 4Kirchhoff-Institut für Physik, Universität Heidelberg — 5Institut für Physikalische Chemie, Johannes Gutenberg-Universität Mainz

Electrochemical doping is essential to overcome limitations in organic devices imposed by low intrinsic conductivity and high injection barriers at the contacts. Materials with very deep lying HOMO-levels like CBP (4,4’-Bis(N-carbazolyl)-1,1’-biphenyl) can be doped with transition metal oxides, e.g. MoO3. In such systems a very low doping efficiency has been found for which the physical origin is not understood. With TEM spectroscopy we could show that agglomeration of MoO3 in the CBP-matrix is most likely the reason for the low doping efficiency. Using TEM tomography we observed that MoO3 forms filament-like structures perpendicular to the substrate. Combining our results with FTIR-measurements, which indicate a charge carrier localization at single molecules, we can model the charge transport to occur at the interface of the MoO3 filaments and the organic matrix.

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