Berlin 2012 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 6: Ge/Si I

HL 6.6: Vortrag

Montag, 26. März 2012, 10:45–11:00, EW 203

Raman scattering study of hydrogen-induced defects in ion-implanted Si — •Sebastian Socher, Edward V. Lavrov, and Jörg Weber — Technische Universität Dresden, 01069 Dresden

A Raman scattering study of single crystalline silicon implanted with ²⁸Si and subsequently treated in a rf hydrogen plasma at 200 ^∘C is presented. Such a treatment results in a broad band at 3830 cm⁻¹ (60 K) previously assigned to the vibrational Q(J) transitions of hydrogen molecules trapped in Si multivacancies [Ishioka et al., Phys. Rev. B 60, 10852-10854 (1999)]. Here, J is the rotational quantum number. The 3830 cm⁻¹ band reveals a substructure, which is assigned to at least two different types of the molecules. The H₂ signals are shown to correlate with the Si–H vibrational modes at 1888, 1930, and 1964 cm⁻¹. A quantitative analysis of the 3830 cm⁻¹ band revealed the splitting of the Q(1) modes of H₂ by the trapping potential. Ortho to para conversion rates of the hydrogen molecules at 77 K and room temperature were found to be 62 ± 15 and 8 ± 2 hours, respectively.