Berlin 2012 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 60: Graphene: Raman Spectroscopy
HL 60.2: Vortrag
Mittwoch, 28. März 2012, 15:45–16:00, ER 164
Spatially resolved Raman spectroscopy of graphene on hexagonal boron nitride — Florian Forster1, Anton Maier1,2, Kenji Watanabe3, Takashi Taniguchi3, and •Christoph Stampfer1,2 — 1JARA-FIT and II. Institute of Physics B, RWTH Aachen, 52074 Aachen, Germany — 2Peter Grünberg Institut (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany — 3Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
Graphene, an one-atom thick hexagonal carbon membrane with unique electronic properties is a promising candidate for high frequency devices and spintronics. However, graphene’s ultimate surface to volume ratio makes also the substrate material highly crucial for accessing its full potential. Extensive research on graphene on SiO2 has shown that the substrate introduces significant disorder, limits carrier mobilities and influences the operation of graphene nanodevices. More recently hexagonal boron nitride has been identified as a promising candidate to overcome some of these limitations. Here we present spatially resolved Raman spectroscopy measurements of single-layer graphene on hexagonal boron nitride substrates, which are compared with measurements of graphene on SiO2. We show that at micrometer length scales fluctuations of local doping domains are significantly suppressed in graphene on hBN and that the average doping level of as-prepared graphene is reduced on hBN as compared to graphene on SiO2. Finally we show that graphene flakes on hBN exhibit a significantly increased thermal coupling to the substrate as compared to SiO2.