Berlin 2012 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 70: Devices II
HL 70.2: Vortrag
Mittwoch, 28. März 2012, 17:30–17:45, EW 015
Tunnel Junctions on GaAs for cost-effective long-wavelength VCSELs — •Hui Li1, Shu-Han Chen2, Werner Hofmann1, and Dieter Bimberg1 — 1Institute of Solid State Physics & Center of Nanophotonics, Technische Universität Berlin — 2Research Center for Applied Sciences, Academia Sinica, Taiwan
Long-wavelength vertical-cavity surface-emitting lasers (VCSELs) are desired for low-cost broadband access. Cost-effective solutions which are compatible to the widely utilized GaAs technology are desired. High-Speed long-wavelength VCSELs, however, require tunnel-junctions (TJs) for low-loss high-speed performance [1, 2]. TJs, on the other hand, are harder to realize on GaAs due to higher bandgaps. Here we report our recent work on highly efficient tunnel junctions grown on GaAs substrates using the InGaAlAsSb material system. We present a detailed analysis both in theory and experiment on several good candidates of low-resistance TJs that may significantly improve the performance of VCSELs and the realization of high performance of long-wavelength VCSELs on GaAs seems feasible.
[1] W. Hofmann, "Evolution of high-speed long-wavelength vertical-cavity surface-emitting lasers," Semicond. Sci. Technol, 26, pp. 014011, 2011. [2] M. Ortsiefer, et al.: "Low-resistance InGa(Al)As Tunnel Junctions for Long Wavelength Vertical-cavity Surface-emitting Lasers," Jap. J. Appl. Phys., 39, pp. 1727, 2000.