Berlin 2012 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 70: Devices II
HL 70.6: Vortrag
Mittwoch, 28. März 2012, 18:30–18:45, EW 015
Embedding submicrometer sized GaN stripes with semipolar quantum wells for application in light emitting diodes — •Robert A. R. Leute1, Dominik Heinz1,2, Frank Lipski1, Tobias Meisch1, Kamran Forghani1, Junjun Wang1, Klaus Thonke2, and Ferdinand Scholz1 — 1Institut für Optoelektronik, Universität Ulm — 2Institut für Quantenmaterie / Gruppe Halbleiterphysik, Universität Ulm
Laser interference lithography is used to create stripe patterns with 240 nm period on silicon doped c-oriented gallium nitride layers grown on 2-inch sapphire substrates. The pattern which was aligned parallel to the a-direction of gallium nitride is transfered to a mask enabling subsequent selective epitaxy. The resulting stripes exhibit triangular cross-section with semipolar {1011} side facets. After epitaxy of InGaN quantum wells on these stripes, Mg doped GaN is grown in a two-step process to planarize the samples which results in a planar c-oriented surface. We present morphological characterization of the final devices as well as electroluminescence results obtained by on-wafer-testing with evaporated contacts.