Berlin 2012 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 71: Poster Session: Graphene / Topological Insulators / Interfaces and Surfaces
HL 71.12: Poster
Mittwoch, 28. März 2012, 16:00–19:00, Poster D
Transport Properties of Graphene on Atomically Flat Substrates — •Jens Mohrmann1, Hilbert v. Löhneysen1,2, and Romain Danneau1,2 — 1Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), Germany — 2Physikalisches Institut, KIT, Germany
Graphene is commonly described as a perfect two dimensional crystal. But although this is true with respect to the electronic properties, TEM and SPM investigations showed that the structure in real space is not perfectly flat. Instead, both suspended and SiO2 supported graphene show ripples. In case of substrate supported graphene, these ripples originate from graphene conforming to the substrate's roughness. Different mechanisms that may lead to interactions between the topographical corrugations and electronic transport properties have been proposed, and recently atomically flat hexagonal boron nitride was found to be an ideal substrate, leading to extremely high charge carrier mobilities. Yet, the influence of the ripples on electronic properties is under debate. Using a graphene transfer technique, we investigate this effect by placing graphene on hexagonal boron nitride and mica and comparing electronic transport measurements and roughness.