Berlin 2012 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 71: Poster Session: Graphene / Topological Insulators / Interfaces and Surfaces

HL 71.18: Poster

Mittwoch, 28. März 2012, 16:00–19:00, Poster D

Direct growth of few-layer graphene on mica — Gunther Lippert, •Marvin Zöllner, Jarek Dabrowski, and Grzegorz Lupina — IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany

In many potential technological applications of graphene a transfer-free, low-temperature graphene deposition method on insulating substrates is required. We present a Van der Waals epitaxy-based approach enabling direct growth of few-layer graphene on freshly cleaved mica surfaces at temperatures below 1000^∘C. Graphene growth is accomplished in an ultra high vacuum molecular beam epitaxy chamber equipped with a high purity pyrolytic graphite source. According to the optical microscopy and Raman spectroscopy, the deposition of carbon onto mica surfaces results in the formation of micrometer-size islands of few-layer graphene (<10 monolayers). Analysis of the relative intensities of the characteristic 2D, G, and D Raman peaks implies a good crystalline quality of the deposited layers. The experimental insights are combined with ab-initio calculations to propose a model for graphene growth on mica surfaces.