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Berlin 2012 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 71: Poster Session: Graphene / Topological Insulators / Interfaces and Surfaces

HL 71.20: Poster

Mittwoch, 28. März 2012, 16:00–19:00, Poster D

Transport through structured ultra-thin Bi2Se3 flakes — •Regine Ockelmann1,2, Christian Volk1,2, Anton Maier1,2, and Christoph Stampfer1,21JARA-FIT and II. Institute of Physics B, RWTH Aachen, 52074 Aachen, Germany — 2PGI, Forschungszentrum Jülich, 52425 Jülich, Germany

Topological insulators (TIs) are a new class of solid state materials with unique electronic properties showing both carriers mimicking relativistic particles and topological protection of their surface states. Theory predicts topological insulators to exhibit a rich variety of physical phenomena such as anomalous magneto-electric coupling, Majorana excitations and unusual spin-orbit interaction. Bismuth (Bi) based compounds such as Bi2Se3 have been shown to be interesting topological insulators with a single Dirac cone surface state and strong spin-orbit interaction.

Here, we present low-temperature transport measurements on structured ultra-thin 3nm-20nm Bi2Se3 flakes, such as Hall bars. The ultra-thin flakes have been prepared by exfoliation of bulk Bi2Se3 and are placed on SiO2 on highly doped Si substrates. The final devices are structured with electron beam lithography followed by ion beam etching and contacted by Ti/Au electrodes. Low temperature ∼ 1,5K transport, i.e. conductance measurements have been carried out by driving back gate voltages from −70V to 70V and by varying magnetic fields up to 9T. We observe an ambipolar electric field effect and deduce a carrier mobility of around ∼ 3000 cm2/(Vs), and a carrier concentration of around ∼ 3· 1013 cm−2.

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