Berlin 2012 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 71: Poster Session: Graphene / Topological Insulators / Interfaces and Surfaces

HL 71.27: Poster

Mittwoch, 28. März 2012, 16:00–19:00, Poster D

Surface chemical and electronic properties of In₂O₃ and In₂O_3−x nanoparticles for ozone detection — •Marcel Himmerlich¹, Chunyu Wang², Volker Cimalla², Oliver Ambacher², and Stefan Krischok¹ — ¹Institut für Physik and Institut für Mikro- und Nanotechnologien, TU Ilmenau, PF 100565, 98684 Ilmenau, Germany — ²Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastr. 72, 79108 Freiburg, Germany

The electrical properties of indium oxide nanoparticle films can be tuned by variation of growth temperature as well as rapid thermal annealing, UV-irradiation and ozone-induced oxidation. The high O₃ sensitivity of indium oxide thin films is strongly linked to their structural and electronic properties. Especially, the alteration of the surface electron accumulation plays an important role in the change of the film resistivity upon O₃ interaction and UV-induced regeneration. We analyse the changes of indium oxide surface properties with respect to varying crystallinity using AFM, XPS and UPS. Compared to stoichiometric In₂O₃ thin films, indium oxide nanoparticles exhibit a high oxygen deficiency and hence a high defect density at the nanoparticle surface. After growth, these defects are saturated by hydrocarbons due to the incomplete decomposition of precursors during low temperature MOCVD. The defects and the changed stoichiometry have impact on the surface band alignment. Upon ozone-induced oxidation and UV photoreduction a reversible change in band bending, surface dipole and O adsorbate density is found and will be discussed in context with electron transport characteristics and thermal properties.