Berlin 2012 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 72: Poster Session: Si-based Photovoltaics / Inorganic Photovoltaics / Structure and Transport in Organic Photovoltaics / Organic Semiconductors

HL 72.2: Poster

Mittwoch, 28. März 2012, 16:00–19:00, Poster D

Absorption properties of femtosecond laser microstructured Black Silicon for solar cell application — •Anna Lena Baumann¹, Kay-Michael Guenther², Thomas Gimpel², Stefan Kontermann¹, Philipp Saring³, Michael Seibt³, and Wolfgang Schade^1,2 — ¹Fraunhofer Heinrich Hertz Institute, EnergieCampus, Am Stollen 19B, 38640 Goslar — ²Clausthal University of Technology, EFZN, EnergieCampus, Am Stollen 19B, 38640 Goslar — ³Georg-August-Universität Göttingen, IV. Physikalisches Institut, Semiconductor Physics, Friedrich-Hund-Platz 1, 37077 Göttingen

First deep-level transient spectroscopy (DLTS) measurements indicate the presence of sulfur energy levels in the band gap of femtosecond laser microstructured Black Silicon. Samples featuring different energy levels in DLTS measurements show different absorption properties as well. One way to influence the absorption values and the sulfur energy levels in Black Silicon is an additional post-laser process annealing step. This decreases the infrared absorption and shifts the sulfur energy levels to different values. Another way to affect the Black Silicon absorption works by changing the laser pulse shape. Preliminary double pulse experiments yield samples with different absorption in the near infrared when varying the double pulse distance. Modifying the pulse shape seems to be a promising method to influence absorption properties along with sulfur energy levels in Black Silicon.