Berlin 2012 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 72: Poster Session: Si-based Photovoltaics / Inorganic Photovoltaics / Structure and Transport in Organic Photovoltaics / Organic Semiconductors
HL 72.4: Poster
Mittwoch, 28. März 2012, 16:00–19:00, Poster D
Solution-processed silicon particle semiconductor films — •Sara Jäckle1,2, Ralf Krause1, and Hans-Ulrich Krebs2 — 1Günther-Scharowsky-Str.1, 91058 Erlangen — 2Institut für Materialphysik, Universität Göttingen
Conventional PV-modules are mostly based on mono- or polycrystalline silicon wafers. These wafers are produced in expensive vacuum based and/or high temperature processes with large percentages of cutoff (up to 50%). An alternative is given by solution-processed film formation with silicon particles. The particles can be produced by ball milling cutoff of silicon ingots, metallurgical grade silicon or by decomposition of silane. Dispersion of silicon particles holds the possibility of simply printing a silicon film and using a roll-to-roll process to produce solar cells. The particles in the films can easily be sintered or mold together by different heat-treatments to form a percolated conducting film. Doped silicon particles of an average size of smaller than 1µm and a large size distribution are produced and used to form thin films. During handling under air atmosphere a silicon oxide shell forms on the particle surface. The silicon oxide is dissolved by treating the particles with hydrofluoric acid. The silicon particles are characterized, dispersed and spin-coated on quartz glass and silicon wafers. The films are electrically, optically and morphologically characterized and optimized. Annealing up to high temperatures leads to coalescence, sintering and melting of the film. The temperature dependent properties of the film are presented. The applications for pn-junctions and solar cells are discussed.