Berlin 2012 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 79: Photovoltaics: General Aspects

HL 79.2: Vortrag

Donnerstag, 29. März 2012, 10:45–11:00, EW 201

Towards intermediate-band formation in solar cells with AlGaInAs quantum dots — •Tristan Braun¹, Christian Schneider¹, Stefan Kremling¹, Nadezda V. Tarakina², Maxwell Adams¹, Matthias Lermer¹, Stephan Reitzenstein^1,3, Lukas Worschech¹, Sven Höfling¹, Alfred Forchel¹, and Martin Kamp¹ — ¹Technische Physik, Universität Würzburg, Germany — ²Experimentelle Physik III, Universität Würzburg, Germany — ³Present adress: Institute of Solid State Physics, Technische Universität Berlin, Germany

Increasing the efficiency of state-of-the-art solar cells is considered as one of the most important challenges nowadays in the quest for sustainable energy resources. In this work, we report on a solar cell design based on the intermediate-band approach, which theoretically allows to reach efficiencies of up to 63% for single intermediate-band cells. Our test device comprises spectrally detuned AlGaInAs/AlGaAs and InAs/GaAs quantum dot (QD) layers in an AlGaAs p-i-n structure, leading to a spectrally large absorption range. By adjusting the material composition in the different QD layers, we can cover a spectral range from 680 to 1150 nm by QD absorption. In addition, we propose a device design allowing for the generation of an hybridized QD subband for the application in future intermediate band solar cell devices with increased efficiency.