Berlin 2012 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 79: Photovoltaics: General Aspects

HL 79.5: Vortrag

Donnerstag, 29. März 2012, 11:30–11:45, EW 201

The band offsets of Cu₂O/ZnO and Cu₂O/GaN heterointerfaces — •Benedikt Kramm, Andreas Laufer, Daniel Reppin, Achim Kronenberger, Philipp Hering, Angelika Polity, and Bruno K. Meyer — 1. Physikalisches Institut, Justus-Liebig-Universität Giessen, Heinrich-Buff-Ring 16, 35392 Giessen, Germany

As known from Minemoto et al. [1] the band offsets of heterostructures affect the electron transport in device applications. Using photoelectron spectroscopy (XPS) we investigate the band alignments of the heterointerfaces mentioned above. We found a conduction band offset (CBO) value of 0.97 eV for Cu₂O/ZnO and 0.24 eV for Cu₂O/GaN. The large CBO between ZnO and Cu₂O will very likely result in low photovoltaic power conversion efficiencies as is the current status of Cu₂O/ZnO solar cells. However, the low conduction band offset of Cu₂O/GaN making GaN a more suitable candidate for the front contact of Cu₂O based solar cells.

[1] Minemoto, T. et al., Solar Energy Materials and Solar Cells, 67(1-4):83-88(2001)