Berlin 2012 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 80: GaN: Preparation and Characterization V (mainly Cathodoluminescence)
HL 80.1: Vortrag
Donnerstag, 29. März 2012, 11:15–11:30, ER 270
Optical properties of ZnO/GaN/InGaN core-shell nanorods — •Ingo Tischer1, Mohamed Fikry2, Ren Zhe2, Manfred Madel1, Matthias Hocker1, Ferdinand Scholz2, and Klaus Thonke1 — 1Institut für Quantenmaterie, Gruppe Halbleiterphysik, Universität Ulm, 89069 Ulm — 2Institut für Optoelektronik, Universität Ulm, 89069 Ulm
ZnO/GaN/InGaN core-shell nanorods standing upright in a well defined pattern can be used for sensing applications. As a first step, we grew ZnO nanopillars on top of GaN pyramids resulting in an ordered array of upright ZnO nanorods with average distance of 6 µm and ≈ 500 nm thickness. This structure was coaxially overgrown with GaN and a subsequent single InGaN quantum well. We report about the different spectral features that are found in these structures. We investigated the various contributions from Zn doping and from the quantum well by spatially resolved cathodoluminescence, transmission electron microscopy, and photoluminescence.