Berlin 2012 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 81: Graphene: Transport incl. Spin Physics and Magnetic Fields I
HL 81.2: Vortrag
Donnerstag, 29. März 2012, 15:15–15:30, ER 270
Magnetotransport through graphene nanoribbons at high magnetic fields — •Silvia Schmidmeier1, Sung Ho Jhang1, Jürgen Wurm2, Iurii Skourski3, Joachim Wosnitza3, Christoph Strunk1, Dieter Weiss1, Klaus Richter2, and Jonathan Eroms1 — 1Institute of Experimental and Applied Physics, University of Regensburg, Germany — 2Institute of Theoretical Physics, University of Regensburg, Germany — 3Dresden High Magnetic Field Laboratory, Helmholtz-Zentrum Dresden-Rossendorf, Germany
For the application of graphene in nanoelectronics one has to understand the behavior of graphene nanostructures, in particular graphene nanoribbons. They were theoretically predicted to show either metallic or insulating behavior around the charge neutrality point, depending on their crystallographic orientation. In experiment, however, graphene nanoribbons always exhibit an insulating state close to the charge neutrality point, which is dominated by disorder rather than a confinement-induced gap in the spectrum. At present, the behavior of GNRs is mainly governed by extrinsic defects rather than their intrinsic properties, and information on the nature of those defects is highly desired.
We have investigated the magnetoresistance of lithographically prepared single-layer graphene nanoribbons as narrow as 70 nm in pulsed, perpendicular magnetic fields up to 60 T and performed corresponding transport simulations using a tight-binding model and several types of realistic bulk and edge disorder. Thus we can disentangle their contributions to transport in graphene nanoribbons.