Berlin 2012 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 90: Graphene: Transport incl. Spin Physics and Magnetic Fields II
HL 90.6: Vortrag
Donnerstag, 29. März 2012, 18:15–18:30, ER 270
solution-based fabrication of thin film transistors with single-walled carbon nanotube — •alireza mousavi1,2, veit wagner1, vincenzo tucci2, patrizia lamberti2, and jürgen fritz1 — 1jacobs university bremen — 2university of salerno
Thin film of single-walled Carbon nanotubes (SWCNTs) offers great promise for a variety of application due to exceptional electrical and mechanical properties. The ability to tune SWCNTs topology is crucial for fabrication of SWCNT-thin film transistors (TFTs). Thin films of SWCNTs network represent a promising track to scalable device manufacturing and to fabricate devices at low temperatures. Insolubility of the CNTs in most solvents and mixture of semiconducting and metallic CNTs are major challenges towards real application. To improve solubility while preserving the properties of SWCNTs are needed for low-cost and industry feasible approaches. In this paper, two methods, vacuum filtration and dielectrophoresis, based on different solvents are compared. As solvents, aqueous solution of sodium dodecylbenzene sulfonate, SDBS, as surfactant and N-Methyl-2-pyrrolidone, NMP, are used to disperse CNTs noncovalently by help of sonication. The devices preparation, Au electrodes with various channel lengths are patterned on silicon wafers. Subsequently, the surface is treated with Amine terminated self-assembled monolayers to selectively adsorb carbon nanotube. All approaches showed promising results, e.g. mobility of 0.3 cm2/Vs was found for vacuum filtration and CNTs dissolved in SDBS. Moreover, it will be shown how quantitatively the metallic part of SWCNT is contributed to the output performance of device.