Berlin 2012 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 92: Poster Session: II-VI Semiconductors & ZnO and related Materials
HL 92.10: Poster
Donnerstag, 29. März 2012, 16:00–19:00, Poster D
TLM measurements of sheet and contact resistance of different ZnO layers produced by wet chemical or sputtering methods — •Julia Waltermann1, Kay-Michael Günther2, Stefan Kontermann1, and Wolfgang Schade1,2 — 1Fraunhofer Heinrich-Hertz-Institute, Am Stollen 19B, 38640 Goslar, Germany — 2Clausthal University of Technology, EFZN, EnergieCampus, Am Stollen 19B, 38640 Goslar, Germany
Within the last few decades zinc oxide emerged as a new material for wide band gap optoelectronic devices. In photovoltaics, ZnO is tested as a transparent electrode or as part of the heterojunction to improve the open circuit voltage. In any case the understanding and control of the electric contacts to ZnO are imperative to realize high performance devices. Considerable studies about metal contacts on crystalline ZnO were published during the last decade. Nevertheless, from an economic point of view low-quality ZnO layers, made by wet chemical or sputtering methods, are still interesting and their contacting has not been investigated in detail. In this work we compare different sputtered or sol gel produced ZnO-layers regarding their sheet and contact resistances to different metals using the transmission line method (TLM). First results show that wet chemical ZnO layers possess a very high sheet resistance due to the large number of grain boundaries. Moreover, even metal contacts like Ti/Au, which were reported to form an ohmic contact to ZnO, show a Schottky like behavior in the IV-characteristics.