Berlin 2012 – scientific programme
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MA: Fachverband Magnetismus
MA 18: Joint Session "Magnetic Semiconductors" (jointly with HL)
MA 18.1: Talk
Tuesday, March 27, 2012, 09:30–09:45, H 0112
(contribution withdrawn)Growth of high-quality EuO films by rf-sputtering — •Thomas Mairoser1, Alexander Melville2, Artur Glavic3, Jürgen Schubert3, Darrell G. Schlom2, and Andreas Schmehl1 — 1Universität Augsburg — 2Cornell University, USA — 3Forschungszentrum Jülich
The ferromagnetic semiconductor europium oxide exhibits a multitude of giant physical properties, such as a metal-to-insulator transition, colossal magneto-resistance, and pronounced magneto-optic effects. Its spin-polarization of >90% in the ferromagnetic state [A. Schmehl et al. , Nature Materials 6, 882 (2007)] and its excellent electronic compatibility with Si have spawned new interest in EuO in the rapidly growing field of spin-electronics.
Because of instability in air the growth of thin films of this highly versatile material is challenging. Up to now high-quality films were only accessible by UHV deposition techniques like molecular beam epitaxy or UHV pulsed laser deposition. Previous film growths using co-sputtering from multiple targets (Eu and Eu2O3) resulted in polycrystalline films with second phases.
Here we report the growth of high-quality epitaxial films on (110) oriented YAlO3 substrates using rf-sputtering from a single Eu2O3 target. The structural and magnetic properties of the commensurately strained films match those of the best EuO films reported in literature.