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Berlin 2012 – wissenschaftliches Programm

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MA: Fachverband Magnetismus

MA 35: Magnetic Heusler Compounds I

MA 35.8: Vortrag

Mittwoch, 28. März 2012, 17:15–17:30, H 0112

Electronic properties of Co2FexMn1−xSi Heusler alloys studied by hard X-ray photoelectron spectroscopy. — •A. Gloskovskii1, S. Thiess3, S. Ouardi1, G. H. Fecher1, 2, W. Drube3, B. Detlefs4, T. Kubota5, Y. Ando5, and C. Felser1, 21Institute of Inorganic Chemistry and Analytical Chemistry, JoGu University, Mainz — 2Max Planck Institute for Chemical Physics of Solids, Dresden — 3Deutsches Elektronen-Synchrotron DESY, Hamburg — 4ESRF, Grenoble — 5Department of Applied Physics, Graduate School of Engineering, Tohoku University, Sendai

Fully epitaxial magnetic tunnel junctions (MTJs) with a Co2YZ thin film as a base electrode and a MgO tunnel barrier exhibit high TMR ratios. Quaternary Co2FexMn1−xSi (CFMS) Heusler alloys are even more promising because the substitution of Mn by Fe increases the number of valence electrons and therefore leads to higher Curie temperatures above 1000 K. The maximum TMR ratio for CFMS-CoFe MTJs was found for Fe fractions of between x=0.4 and 0.6. Half-metallicity disappears for the samples with x≥0.8.

A B2 and L21 site ordered stack of MgO substrate/ Cr [40 nm] buffer layer/Co2FexMn1−xSi [30 nm]/MgO[2 nm]/AlOx [1.3 nm] (x = 0, 0.2 … 1.0) films was studied at beamline P09 at PETRA III and beamline ID32 at the ESRF. The hard X-Ray photoelectron spectroscopy (HAXPES) studies were performed with an excitation energy of 6 keV. It was found that the position of Co 2p core levels and the density of states in the valence band region strongly depend on the Fe/Mn ratio.

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