Berlin 2012 – wissenschaftliches Programm
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MM: Fachverband Metall- und Materialphysik
MM 17: Poster Session
MM 17.2: Poster
Montag, 26. März 2012, 17:00–19:00, Poster B
Thermal stability and crystallization of magnetron sputtered amorphous Si2C — •René Gustus1,2, Wolfgang Gruber2, Lienhard Wegewitz1,3, Harald Schmidt2,3, and Wolfgang Maus-Friedrichs1,3 — 1Institut für Energieforschung und Physikalische Technologien, TU Clausthal, Leibnizstr. 4, 38678 Clausthal-Zellerfeld, Germany — 2Institut für Metallurgie, TU Clausthal, Robert-Koch-Straße 42, Clausthal-Zellerfeld, Germany — 3Clausthaler Zentrum für Materialtechnik, TU Clausthal, Leibnizstr. 4, 38678 Clausthal-Zellerfeld, Germany
During the last decades, amorphous silicon carbide (SiC) has attracted much attention in several fields of scientific research. Non-stoichiometric amorphous SiC became of specific interest due to the possibility of tailoring the material properties by varying its chemical composition. We investigated the thermal stability and the crystallization of magnetron sputtered amorphous non-stoichiometric Si2C deposited on silicon substrates, by means of XPS, AES, XRD, AFM and SEM. Crystallization of amorphous Si2C takes place at temperatures around 800 °C, accompanied by the growth of silicon crystalls on the surface. Annealing at 1200 °C for 2 hours leads to crystallization of silicon and silicon carbide, coupled with the formation of large structures and a silicon enrichment in the surface region of the film. After 20 hours of anealing at 1200 °C, the crystalized silicon has disappeared from the surface and no silicon enrichment is detectable any longer. The experimental results and the underlying processes are discussed.