Berlin 2012 – wissenschaftliches Programm

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MM: Fachverband Metall- und Materialphysik

MM 41: Topical Session Modern Atom Probe Tomography II - Functional Materials

MM 41.3: Vortrag

Mittwoch, 28. März 2012, 17:15–17:30, H 0107

Nanoanalysis of CoFeB electrodes in pseudo spin valve magnetic tunnel junction — •Houari Bouchikhaoui, Patrick Stender, Mohammed Reda Chellali, and Guido Schmitz — Institut für Materialphysik der WWU, Wilhelm-Klemm-Str. 10, 48149 Münster, Germany

A magnetic tunnel junction (MTJ), which consists of a thin insulator layer sandwiched between two ferromagnetic electrode layers, exhibit tunnel magnetic resistance TMR due to spin-dependent electron tunnelling. The theoretical prediction of over 1000% TMR by the preferential tunnelling of Δ1 Bloch states in Fe/MgO/Fe magnetic tunnel junction led to the experimental demonstration of giant TMR about 150% at room temperature. The pseudo spin valve PSV MTJs Ta/Co₂₀Fe₆₀B₂₀/MgO/Co₂₀Fe₆₀B₂₀/Ta has great interest due to high magnetoresistance TMR value at room temperature after annealing at elevated temperatures. In this work, we analysed the nanostructure and chemical distribution of constituent elements in Ta/Co₂₀Fe₆₀B₂₀/MgO/Co₂₀Fe₆₀B₂₀/Ta PSV MTJs annealed between room temperature and 600C^∘ by atom probe tomography (TAP). The segregation of Boron to the interfaces will be presented in dependence on temperature.