Berlin 2012 – wissenschaftliches Programm
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MM: Fachverband Metall- und Materialphysik
MM 41: Topical Session Modern Atom Probe Tomography II - Functional Materials
MM 41.4: Vortrag
Mittwoch, 28. März 2012, 17:30–17:45, H 0107
Atom Probe Tomography of ONO stacks for in-production flash memory — •Sebastian Koelling1, Ahmed Shariq1, and Sonja Richter2 — 1Fraunhofer Center Nanoelectronic Technologies, Königsbrücker Straße 180, 01099 Dresden, Germany — 2X-FAB Dresden GmbH & Co. KG, Grenzstrasse 28, 01109 Dresden, Germany
The introduction of laser assisted Atom Probes with a wide angle detector systems made Atom Probe Tomography a highly interesting technique for routine analysis of semiconductor devices. While laser assisted Atom Probe analysis of bulk semiconductors like silicon or germanium is nowadays routinely possible, the analysis of insulating layers is still challenging even with the most recent generation of tools. As insulating oxide and nitride layers are an integral part of the gate of every transistor, we are working on overcoming this limitation. Here we will report on our progress in analyzing gate stacks for state-of-the art transistor structures. We will focus on (silicon-) oxynitride/oxide stacks used in present-day flash memory. These stacks are 10-20 nm thick and are particularly challenging to analyze due to their comparatively large thickness and the need for mapping the nitrogen content inside the layers. We will present ways to improve the yield when measuring these stacks and an approach to quantify the nitrogen in-spite of the mass overlap with silicon.