Berlin 2012 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 19: Clean surfaces I

O 19.4: Vortrag

Montag, 26. März 2012, 18:15–18:30, A 053

SnO₂: Band Structure Measurements by ARPES and Determination of Resistivity and Carrier Concentration — •Stephan Machulik¹, Valentina Scherer¹, Christoph Janowitz¹, Helmut Dwelk¹, Alicia Krapf¹, Klaus Irmscher², and Recardo Manzke¹ — ¹Humboldt-Universität zu Berlin, Institut für Physik, Newtonstr. 15, Berlin, Germany — ²Leibniz-Institut für Kristallzüchtung, Max-Born-Str. 2, Berlin, Germany

So far the experimental band structure of SnO₂ has only been measured on thin films or the surface of crystals prepared by sputtering [1]. These methods however lead to oxygen deficient and reconstructed surfaces. For the cleaved surfaces of single crystals, investigated by us, a higher resolution for the band structure measurements was obtained, due to less surface imperfections. By comparing our results with HSE hybrid functional band structure calculations good agreement has been found [2]. Prior to the angular resolved photoemission (ARPES) measurements the resistivity (ρ) and the carrier concentration (n) was determined by van der Pauw measurements.

[1] M. Batzil and U. Diebold, Progress in Surface Sience 79 (2005) 47-154

[2] J. B. Varley, A. Janotti, and C. G. Van de Walle, Physical Review B 81, 245216 (2010)