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O: Fachverband Oberflächenphysik
O 34: Poster Session I (Graphene; Plasmonics and nanooptics; Coherence and coherent control in nanophotonics and plasmonics)
O 34.17: Poster
Tuesday, March 27, 2012, 18:15–21:45, Poster E
Quasi-free standing trilayer epitaxial graphene on SiC(0001) — •Stiven Forti1, Camilla Coletti2, Konstantin V. Emtsev1, Alexei Zakharov3, Kevin Daniels4, Biplob Daas4, M.V.S. Chandrashekhar4, and Ulrich Starke1 — 1Max Planck Institute for Solid State Research, Heisebergstr. 1, 70569 Stuttgart, Germany — 2Center for Nanotechnology Innovation @ NEST, Istituto Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy — 3Max Lab, Lund University, Box 118, Lund, S-22100, Sweden — 4University of South Carolina, 301 S. Main St, Columbia, SC 29208, USA
The control of the thermal decomposition of the 6H-SiC(0001) surface to grow a homogeneous coverage of epitaxial few-layers graphene remains not easily achievable in the experiments. In the present work, we report on high resolution ARPES data, showing the electronic band structure of quasi-free standing trilayer epitaxial graphene. The system is characterized in different doping conditions, from p-type to charge neutrality. LEEM data provide evidence that the number of graphene layers is homogeneous over the surface up to a several micron scale. The question of different stacking sequences will be addressed with the aid of theoretical calculations to fit the experimental band structures.