Berlin 2012 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 65: Graphene V
O 65.1: Vortrag
Donnerstag, 29. März 2012, 10:30–10:45, MA 041
The Suitability of Single Crystal Metal Films as Substrates for Graphene Growth — •Patrick Zeller1, Michael Weinl2, Matthias Schreck2, and Joost Wintterlin1 — 1LMU München, Department Chemie — 2Universität Augsburg, Institut für Physik
We report about a project in which thin, single crystal films of various metals are investigated as substrates for the epitaxial growth of graphene. The films consist of 100 to 150 nm thick, epitaxially oriented metal layers grown on Si(111) wafers. 40 to 100 nm thick yttria-stabilized zirconia (YSZ) buffer layers separate the metal from the Si substrate [1]. As metals we have investigated Ir(111), Ru(0001), and Ni(111). All metal films display high crystalline quality with a typical mosaic spread in the range of 0.2 to 0.9°. Ir films have the lowest values down to 0.1°. Graphene was grown on the films by chemical vapor deposition (CVD) of ethylene at elevated temperatures. Methods used were scanning tunneling microscopy (STM), low-energy electron diffraction (LEED), Auger electron spectroscopy (AES), atomic force microscopy (AFM) and scanning electron microscopy (SEM). The topography of the as-grown metal films can be improved by annealing in UHV. Investigations of the thermal stability and dewetting of the films were done. AFM and SEM show the size of the graphene domains. We show that the quality of the graphene layers achieved on these metal films is comparable to epitaxial graphene grown on bulk metal single crystals. [1] Gsell, S., et al., Journal of Crystal Growth 2009, 311, 3731.