Berlin 2012 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 65: Graphene V

O 65.9: Vortrag

Donnerstag, 29. März 2012, 12:30–12:45, MA 041

Extreme UV interference lithography of carbon nanomembranes and graphene — •Andreas Winter¹, Annika Willunat¹, Michaela Vockenhuber², Yasin Ekinci², Andre Beyer¹, Armin Gölzhäuser¹, and Andrey Turchanin¹ — ¹Physics of Supramolecular Systems and Surfaces, University of Bielefeld, D-33615 Bielefeld — ²Laboratory for Micro and Nanotechnology, Paul Scherrer Institute, 5132 Villigen, Switzerland

Two-dimensional (2D) carbon materials like graphene, graphene oxide, carbon nanomembranes (CNMs) or ultrathin polymeric films have recently attracted enormous interest due to their potential for use in electronics, chemical and biological sensors, nanofilters, hybrid materials, etc. Most of these applications require lithographic patterning of these 2D carbon materials with the nanoscale resolution. In this respect, Extreme UV Interference Lithography (EUV-IL) provides both large-scale patterning and high resolution with an ultimate limit in the sub-10 nm range. We employ EUV-IL to generate two-dimensional nanopatterns of ca. 1 nm thick CNMs as well as of graphene. We characterize these structures with a Helium Ion Microscope (HIM), which allows imaging of topographic and chemical features of both supported CNMs on insulating substrates, freely suspended CNMs and graphene sheets.