Berlin 2012 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 90: Metals and semiconductors: Epitaxy and growth
O 90.7: Vortrag
Freitag, 30. März 2012, 12:00–12:15, A 060
Investigation of the three layer system MgO/Fe/GaAs(001) — •Dominique Handschak1, Tobias Lühr1,2, Frank Schönbohm1,2, Sven Döhring2, Christoph Keutner1,2, Ulf Berges2, and Carsten Westphal1,2 — 1TU-Dortmund, Experimentelle Physik I — 2DELTA, TU-Dortmund
We report a synchrotron high-resolution x-ray photoemission (XPS) and photoelectron diffraction (XPD) study of the three layer system MgO/Fe/GaAs(001). The interface of Fe/GaAs is interesting because it is a semiconductor-ferromagnetic junction, being an interesting model system for research to spintronics. Magnesium oxide is a very efficient insulator which is used especially in TMR-components. Both interfaces have a strong influence on the efficiency of the contributing effects. In this study we report on the preparation process of the three layer system with a GaAs reconstructed surface. The structure of each layer could be clarified with core level high-resolution spectra and diffraction patterns.