Berlin 2012 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 90: Metals and semiconductors: Epitaxy and growth
O 90.8: Vortrag
Freitag, 30. März 2012, 12:15–12:30, A 060
XPD-pattern analysis of MgO/Fe/GaAs(001) by means of Genetic Algorithms — •Tobias Lühr1,2, Dominique Handschak1, Frank Schönbohm1,2, and Carsten Westphal1,2 — 1Fakultät Physik - TU Dortmund, Otto-Hahn-Str.4, D 44221 Dortmund, Germany — 2DELTA - TU Dortmund, Maria-Goeppert-Mayer-Str. 2, D 44227 Dortmund, Germany
Thin films of iron on gallium arsenide are of great relevance in current research. This system forms a semiconductor-ferromagnetic junction. For this reason it becomes interesting for spintronic devices. An insulating layer like magnesium oxide on this system offers the possibility of growing additional layers for technical applications (e.g. TMR-components). We investigated the three layer system MgO/Fe/GaAs(001) by means of angle-resolved photoelectron diffraction (XPD) for determining the structure of the individual layers and interfaces. For this task it is necessary to compare the experimental data sets to simulated diffraction patterns of several model structures. In the face of endless possible structures we developed a genetic algorithm that generates and optimizes such model structures in order to fit the experimental data sets. We show the functionality of the algorithm, and the results of the MgO/Fe/GaAs(001) structure determination.