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SYRS: Symposium Resistive Switching

SYRS 2: Poster: Resistive switching (jointly organized by DS, DF, KR, HL)

SYRS 2.15: Poster

Thursday, March 29, 2012, 17:30–19:00, Poster E

Magnesium- and fluorine co-doping of vanadium dioxide films — •Marc K. Dietrich, Andreas Laufer, Angelika Polity, and Bruno K. Meyer — I. Physics Institute, Justus-Liebig-University Gießen, Heinrich-Buff-Ring 16, 35392 Gießen, Germany

Thermochromic Mg- and F-doped VO₂ thin films, which enable new possibilities as an intelligent window coating, were deposited by rf sputtering. The appliance of VO₂ for energy efficient fenestration is so far limited by some properties of the bulk material. The alternation of luminous transmittance of bulk VO₂, which is caused by a reversible metal-semiconductor phase transition, will appear at temperatures about 68^∘C. By doping with Mg or F this transition temperature can be decreased to practical values. Furthermore, the Mg-doping level is associated with a blue shift of the band gap energy and is connected with an increase of luminous transmittance.