Berlin 2012 – wissenschaftliches Programm

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TT: Fachverband Tiefe Temperaturen

TT 6: Transport: Nanoelectronics I - Quantum Dots, Wires, Point Contacts 1

TT 6.8: Vortrag

Montag, 26. März 2012, 11:30–11:45, BH 334

Influence of interaction-induced dephasing on the ac-conductivity of disordered metals — •Martin Schäffer, Maximilian Treiber, Oleg Yevtushenko, and Jan von Delft — Physics Department, Arnold Sommerfeld Center for Theoretical Physics, and Center for NanoScience, Ludwig-Maximilians-Universität München, D-80333 München, Germany

We consider the influence of electron-interactions on the weak-localization (WL) correction to the ac-conductivity of disordered metals. It is well known that both an external ac-frequency and an interaction induced dephasing rate can govern the infrared behavior of the WL, but their interplay has never been studied in detail. One reason for this is that previous calculations had to employ a self-consistent regularization scheme which may lead to inaccurate results. Here, we adopt the diagrammatic approach developed in Ref.[1], which is free of both infrared and ultraviolet divergences since it includes so-called vertex diagrams. We analyze how this approach is modified at finite ac-frequencies and determine the leading cross- contributions for metals of arbitrary dimensionality. Furthermore, we discuss the effect of a finite system size (including the crossover to the so-called 0D regime of dephasing) on the interplay.