Stuttgart 2012 – wissenschaftliches Programm
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P: Fachverband Plasmaphysik
P 5: Niedertemperaturplasmen
P 5.2: Vortrag
Montag, 12. März 2012, 14:15–14:30, V57.03
Variation of substrate biasing and temperature and their influence on the crystal orientation of γ-Al2O3 films — •Marina Prenzel, Annika Kortmann, and Achim von Keudell — AG Reaktive Plasmen, Ruhr-Universität Bochum, Bochum, Germany
Temperature and substrate bias play a key role in the structural evolution of Al2O3 during the deposition process. Firstly, crystallinity depends on the mobility of the particles in the growing film, which is influenced by the substrate temperature. Additionally, correct tailoring of the substrate bias allows to selectively control the energy distribution function of the ions impinging on the substrate (IEDF). Thus, film characteristics such as hardness, adhesion, crystallinity, or wear resistance can be controlled. In this work, manipulation of the substrate bias is performed by variation of the frequency and amplitude. We will show how different bias functions affect the shape of the IEDF while keeping the mean energy constant at 55 eV. Additionally, the influence of temperature (500 ∘C, 550 ∘C and 600 ∘C) will be shown.
The films are deposited in a RF magnetron discharge, driven by 13.56 MHz and 71 MHz. The target is mounted on the powered electrode and a silicon substrate is placed on a biased electrode at the opposite side. Film characterization is performed using FTIR and XRD to determine the orientation/crystallinity of the films. The measurements are correlated with measured and simulated IEDFs. We will show how the tailoring of the IEDF through bias shape manipulation is an excellent tool for controlling film structure. The work is funded by DFG within SFB-TR 87.