Stuttgart 2012 – wissenschaftliches Programm
Q 35.80: Poster
Mittwoch, 14. März 2012, 16:30–19:00, Poster.I+II
Optical studies on individual transitions in GaN:Zn,Si/AlGaN heterostructures — •Matin Mohajerani1, Arne Behrends1, Silke Peters2, Helmut Hofer2, Waldemar Schmunk2, Stefan Kück2, Andrey Bakin1, and Andreas Waag1 — 1Institute for Semiconductor Technology, Hans-Smmer-Straße 66, 38106 Braunschweig, Germany — 2Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig, Germany
During the past few years many methods have been developed to generate single-photon sources including atoms, ions, molecules or impurities in semiconductors and quantum dots. In this work, we have investigated Si and Zn co-doped GaN/AlGaN heterostructures. This approach could potentially allow room temperature electrically driven single photon emission. The samples studied were fabricated by metal-organic chemical vapor deposition and were patterned by photolithography and plasma etching processes in 3D pillar structures in order to confine individual emitters. Photoluminescence (PL) images were obtained by a confocal fluorescence microscope with a spatial resolution of 0.3 µm and focal resolution of 0.5 µm demonstrating well separated pillars. PL spectra measured under 325 nm He-Cd laser excitation show a broad emission around 2.9 eV (blue luminescence band) which is attributed to transition between the shallow donor band and the Zn deep acceptor. In addition, time-resolved PL was utilized to study the recombination lifetime of the BL transitions by 375 nm pulsed laser excitation. The potential of the GaN:Zn system for single photon emission will be discussed in detail.