Dresden 2013 – wissenschaftliches Programm
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T: Fachverband Teilchenphysik
T 68: Halbleiterdetektoren: Strahlenhärte, neue Materialien und Konzepte 3
T 68.4: Vortrag
Donnerstag, 7. März 2013, 17:30–17:45, GER-009
Charge Trapping in the Simulation of ATLAS Semi-Conductor Tracker — •Marco Filipuzzi — DESY/Hamburg University
One of the main, macroscopic radiation damage effects in silicon detectors is the charge trapping. It occurs when in the bulk of silicon sensors, exposed to intensive irradiation, defects acting as charge traps are induced. As a consequence, the charge collection efficiency of the detector is affected. The Semi-Conductor Tracker is the second innermost detector in the ATLAS experiment and will experience radiation fluences on the order of 1014 cm−2 [1 MeV neq] during its operation before 2021. It is expected that charge trapping together with other radiation effects will affect the detector response and performance. For this reason the charge-trapping effect has been implemented in the simulation framework of the ATLAS Semi-Conductor Tracker. The talk will present the general scheme used for this, together with some preliminary results regarding the detector response as a function of the fluence received.