Hannover 2013 – wissenschaftliches Programm
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Q: Fachverband Quantenoptik und Photonik
Q 4: Quantum information: Quantum communication I
Q 4.5: Vortrag
Montag, 18. März 2013, 12:00–12:15, F 342
State selective resonant excitation of single silicon-vacancy centres in diamond — •Tina Müller1, Christian Hepp2, Benjamin Pingault1, Elke Neu2, Christoph Becher2, and Mete Atatüre1 — 1University of Cambridge, Cavendish Laboratory, Cambridge, United Kingdom — 2Universität des Saarlandes, Saarbrücken, Germany
Colour centres in diamond have attracted wide interest in recent years for applications in quantum enabled technologies. The negatively charged silicon-vacancy (SiV) centre is a particularly promising candidate due to its exceptional brightness and high concentration of the emission into the zero-phonon line, which shows four individual transitions at liquid helium temperature. Also, electron-spin resonance measurements and calculations based on density-functional theory indicate a paramagnetic ground state with S=1/2 for this centre. However, no optical signature of this electronic spin has been observed yet.
Using resonance fluorescence to resonantly drive the SiV centre at finite magnetic fields, we show that the emission intensity into the individual Zeeman-split zero phonon line transitions depends strongly on the resonantly driven transition. Two subsets of transitions can be observed, which indicates that population transfer in the optical excited state e. g. via phonon-mediated thermalisation processes can be strongly suppressed. We propose that the reason for this selectivity are two different electron spin projections for these excited states. This is in good agreement with a recently developed model based on a S=1/2 electron associated with this centre.