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Regensburg 2013 – wissenschaftliches Programm

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DF: Fachverband Dielektrische Festkörper

DF 12: Poster 1

DF 12.47: Poster

Dienstag, 12. März 2013, 10:30–13:30, Poster D

The influence of p- and n-doping on the intrinsic properties of the Heusler compound Fe2VAl — •Franziska Seifert1,2, Christian G.F. Blum1, Frank Steckel1, Christian Hess1, Bernd Büchner1, Sabine Wurmehl1, Stefan Martin2, and David Rafaja21Leibniz-Institut für Festkörper- und Werkstoffforschung Dresden — 2TU Bergakademie Freiberg, Germany

The Heusler compound Fe2VAl is considered as a non-magnetic thermoelectric material. In this work, we studied the intrinsic properties of the Heusler compound Fe2VAl and the influence of p- and n-doping on the intrinsic materials properties of the corresponding Si and Ti doped compounds using single crystals. Electron back scattering diffraction reveals the presence of a V-rich secondary phase in particular in crystals with Si and in the parent compound. The depletion of V from the Fe2VAl matrix apparently leads to localized Fe moments and to ferromagnetism in the corresponding samples. Interestingly, the sample with Ti and less V depletion shows a significant enhancement of the figure of merit compared to the other samples.

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