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Regensburg 2013 – wissenschaftliches Programm

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DF: Fachverband Dielektrische Festkörper

DF 12: Poster 1

DF 12.56: Poster

Dienstag, 12. März 2013, 10:30–13:30, Poster D

Tunnel magneto-Seebeck effect in tunnel junctions with perpendicular magnetic anisotropy — •Tim Eggebrecht1, Marvin Walter1, Vladyslav Zbarsky1, Markus Münzenberg1, Volker Drewello2, Karsten Rott2, Günter Reiss2, Andy Thomas2, Patrick Peretzki3, Michael Seibt3, Michael Czerner4, Michael Bachmann4, and Christian Heiliger41I. Physikalisches Institut, Universität Göttingen — 2Department of Physics, Bielefeld University — 3IV. Physikalisches Institut, Universität Göttingen — 4I. Physikalisches Institut, Universität Giessen

In CoFeB/MgO/CoFeB tunnel junctions (MTJs) with in-plane magnetic anisotropy the tunnel magneto-Seebeck effect (TMS) has already been observed. Recently, MTJs with perpendicular magnetic anisotropy (PMA) were fabricated by reducing the thickness of the two CoFeB layers. The thickness has to be lower than 1.3 nm, as observed by other groups. These MTJs with 4 monolayers MgO barrier show a TMR of more than 40 % and a very low switching current density of 2· 105 A/cm2.

In this work, the tunnel magneto-Seebeck effect is studied in junctions with in-plane and perpendicular magnetic anisotropy. The heating is achieved with a diode laser which delivers powers of up to 150 mW. The influence of the thin CoFeB layers and the MgO barrier on the TMS is studied.

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