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Regensburg 2013 – scientific programme

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DF: Fachverband Dielektrische Festkörper

DF 12: Poster 1

DF 12.6: Poster

Tuesday, March 12, 2013, 10:30–13:30, Poster D

Influence of substrate imposed strain on epitaxially grown BiFeO3 thin films investigated by Raman spectroscopy — •Andreas Talkenberger1, Cameliu Himcinschi1, Florian Johann2, Ionela Vrejoiu2, and Jens Kortus11TU Freiberg, Inst. of Theor. Physics, Leipziger Str. 23, D-09596 Freiberg — 2Max Planck Inst. of Microstr. Physics, Weinberg 2, D-06120 Halle

BiFeO3 (BFO) is an interesting candidate for multiferroic applications. Therefore a deep understanding of the material properties and the fabrication of high quality epitaxial thin films is necessary. In this work we investigated epitaxially grown BFO thin films fabricated by pulsed laser deposition on SmScO3 (110), GdScO3 (110) and DyScO3 (110) substrates by means of Raman spectroscopy. The BFO films on DyScO3 were synthesized with 71 and 109 stripe domain patterns[1,2]. The Raman spectra were recorded using the 532 nm emission line of a frequency doubled Nd:YAG laser as well as the 442 nm emission line of a He-Cd laser. The wave number shift of the phonon modes at 171 and 220 cm−1 correlates to the epitaxial strains in the BFO films grown on the different substrates. Further, we found an anomalous behaviour of the phonon mode at 140 cm−1. While the modes at 171 and 220 cm−1 are redshifted with increasing tensile strain, the mode at 140 cm−1 is blueshifted. A similar anomalous effect was observed previously in BiCrO3 films for the phonon mode at 180 cm−1. This work is supported by the German Research Foundation DFG HI 1534/1-1 and SFB762. [1] F.Johann, Phys. Rev. B 84, 094105 (2011), [2] F.Johann, Phys. Status Solidi B 249, 2278 (2012)

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