Regensburg 2013 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 32: Poster Session IV: Atomic layer deposition; Organic thin films; Organic Electronics and Phototovoltaics; Organic Materials for Spintronics - from spinterface to devices; Thin film photovoltaic materials and solar cells

DS 32.19: Poster

Donnerstag, 14. März 2013, 17:00–20:00, Poster B2

In-situ X-ray reflectivity of the formation of OTS-SAMs on amorphous SiO₂ and quartz — •Hans-Georg Steinrück¹, Michael Klimczak¹, Stefan Gerth¹, Andre Beerlink², and Andreas Magerl¹ — ¹Lehrstuhl für Kristallographie und Strukturphysik, Universität Erlangen Nürnberg , Germany — ²Hamburger Synchrotronstrahlungslabor am Deutsches Elektronen-Synchrotron DESY, Germany

To gather further insight into the correlation between the structure of (C₁₇H₃₇Cl₃Si, OTS) self-assembled monolayers and the nature of the substrate [1] we compared in-situ the growth of OTS-SAMs on amorphous SiO₂ and crystalline quartz (001) via specular X-ray reflectivity. These measurements were performed at the high resolution diffraction beamline P08, DESY

As the striking difference between these two substrates we note that the dominant reflection minima remain at a constant q value for amorphous SiO₂ albeit with increasing amplitude over time, indicating that the molecules attach in an island growth mode (similar to the findings of Richter et al. [2]), whereas for crystalline quartz the corresponding minima shift to lower q_z-values signaling an increasing layer thickness during the coating as expected for a random growth mode [3].

[1] Steinrueck, H. G.; Klimczak, M.; Gerth, S.; Magerl, A. submitted 2012

[2] Richter, A. G.; Yu, C. J.; Datta, A.; Kmetko, J.; Dutta, P. Physical Review E 2000, 61, 607-615.

[3] Mirji, S. A. Surface and Interface Analysis 2006, 38, 158-165.