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Regensburg 2013 – scientific programme

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DS: Fachverband Dünne Schichten

DS 32: Poster Session IV: Atomic layer deposition; Organic thin films; Organic Electronics and Phototovoltaics; Organic Materials for Spintronics - from spinterface to devices; Thin film photovoltaic materials and solar cells

DS 32.20: Poster

Thursday, March 14, 2013, 17:00–20:00, Poster B2

X-ray reflectivity study on the growth of a porphyrin monolayerJulia Müller, •Hans-Georg Steinrück, and Andreas Magerl — Lehrstuhl für Kristallographie und Strukturphysik, Universität Erlangen Nürnberg , Germany

We investigated the growth of a metallo porphyrin (C45H28CoN4O2, CoP) self-assembled monolayer on amorphous SiO2 via X-ray reflectivity. The fractional coverage of the sample was examined as a function of the reaction time in solution and was determined by multiplying the electron density with the thickness of the monolayer, which both increase with reaction time until saturation. The thickness, corresponding molecular tilt and eletron density of the fully covered substrates compare with the findings of Griffith et al. [1].

Langmuir isotherms state that the rate of surface reactions is given as: dθ/dt=ka(1−θ)Ckdθ. Integration of this equation gives the time dependence of the fractional coverage. Fitting this to the experimental data yields the adsorption rate constant for CoP on amorphous SiO2 at the given concentration of about 0.8mM.

[1] Griffith, M. J.; James, M.; Triani, G.; Wagner, P.; Wallace, G. G.; Officer, D. L. Langmuir 2011, 27, 12944-12950.

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