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Regensburg 2013 – scientific programme

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DS: Fachverband Dünne Schichten

DS 32: Poster Session IV: Atomic layer deposition; Organic thin films; Organic Electronics and Phototovoltaics; Organic Materials for Spintronics - from spinterface to devices; Thin film photovoltaic materials and solar cells

DS 32.3: Poster

Thursday, March 14, 2013, 17:00–20:00, Poster B2

Atomic Layer deposition of TiO2 from TDMAT and H2O: Evolution of microstructure and resulting resistance switching characteristics — •Solveig Rentrop1, Barbara Abendroth1, Theresa Moebus1, Ralph Strohmeyer1, Alexander Schmid2, and Dirk C. Meyer11Institut für Experimentelle Physik, TU Bergakademie Freiberg, Leipziger Str. 23, 09599 Freiberg — 2Institut für Angewandte Physik, TU Bergakademie Freiberg, Leipziger Str. 23, 09599 Freiberg

Atomic layer deposition (ALD) is a well-known technique used for the fabrication of thin oxide layers for high-k-dielectrics and resistive switching memory applications. Here, we present studies on the atomic layer deposition of TiO2 from Tetrakis(dimethylamino)titan (TDMAT) and H2O precursors in the substrate temperature range from 150 C to 350 C. The effects of the deposition temperature Ts and layer thickness d on the resulting anatase and rutile phase composition are investigated by grazing incidence X-ray diffraction. For Ts above 200 C metastable anatase is always the first crystallized phase observed. At temperatures of 250 C and higher anatase formation is always followed by the nucleation of rutile. Our results are summarized in a Tsd phase diagram. To determine the effect of the presence of crystalline phases on resistance switching performance, current-voltage characteristics are measured for Au-TiO2-TiN capacitor structures with amorphous, partially and fully crystalline TiO2 layers.

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