Regensburg 2013 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 32: Poster Session IV: Atomic layer deposition; Organic thin films; Organic Electronics and Phototovoltaics; Organic Materials for Spintronics - from spinterface to devices; Thin film photovoltaic materials and solar cells

DS 32.58: Poster

Donnerstag, 14. März 2013, 17:00–20:00, Poster B2

Electrical and structural characterization of CdTe thin film solar cells with In₂S₃ buffer layer — •Felix Lind¹, Johanna Krammer², Christoph Heisler¹, Christian Kraft¹, Christian-Herbert Fischer², and Werner Wesch¹ — ¹Friedrich-Schiller-Universität Jena, Institut für Festkörperphysik, Helmholtzweg 3, 07743 Jena — ²Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin

As an alternative to the commonly used toxic CdS, in this work In₂S₃ is used as n-type buffer layer in CdTe thin film solar cells. In contrast to CdS, In₂S₃ can be deposited in a non-vacuum process at low temperatures without producing toxic waste. The In₂S₃ buffer layers with varied chlorine concentrations and thicknesses were fabricated with the "ion layer gas reaction" (ILGAR) process. Subsequently the CdTe layers were deposited by the physical vapour deposition (PVD) method. The electrical properties of the complete solar cells were investigated by means of current-voltage measurements (I-V) and external quantum efficiency (EQE). The results show that the conversion efficiencies and quantum efficiencies are significantly lower for the CdTe thin film solar cells with In₂S₃ buffer layer compared to solar cells with CdS buffer layer. Scanning transmission electron microscopy (STEM) was used to investigate the structural properties. It was found that the post deposition CdCl₂-treatment leads to a non-uniform and lower thickness of the In₂S₃ layer. Altogether CdTe solar cells with In₂S₃ buffer layer are producible in principle at the used process parameters, but show no improvement compared to CdS buffer layer.