Regensburg 2013 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 17: Interfaces and surfaces
HL 17.6: Vortrag
Montag, 11. März 2013, 16:15–16:30, H15
Surface characteristics of polar InN layers grown by MOVPE, MBE and migration enhanced afterglow techniques. — •Daria Skuridina1, Duc V. Dinh1, Rolf Aidam2, Michael Kneissl1, and Patrick Vogt1 — 1Institute of Solid State Physics, Technische Universitaet Berlin, Hardenbergstr. 36, EW6-1, 10623 Berlin, Germany — 2Department Epitaxy, Fraunhofer Institute IAF, Tullastr. 72, 79108 Freiburg, Germany
The surface morphology of an InN layer affects its optical and electrical properties and thus influences the efficiency of InN based devices. In this work we investigate the correlation between morphology, bonding configuration and preparation conditions for polar surfaces of InN layers grown by different growth techniques: metal-organic vapour phase epitaxy (MOVPE), molecular beam epitaxy (MBE), and migration enhanced afterglow (MEAglow) that results in a growth of N-rich InN layers [1]. Morphology, atomic structure and symmetry of the InN surfaces were measured by scanning tunneling microscopy (STM) and low energy electron diffraction (LEED). Auger and X-ray photoelectron spectroscopy (XPS) were used for chemical composition analysis of the layers. InN surfaces were prepared under ultra-high vacuum conditions by annealing, significantly reducing surface contaminations. We find that the surface oxide bonding configuration differs for InN grown by MEAglow and the observed (√3×√3)R 30∘ surface symmetry differs from the commonly observed (1×1) surfaces for InN grown by MBE and MOVPE. We will discuss the related atomic structure and bonding configuration.[1]K.S.A.Butcher, Phys.Stat.Sol. A 209, 41(2012)