Regensburg 2013 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 26: Lasers and LEDs II
HL 26.6: Vortrag
Montag, 11. März 2013, 18:00–18:15, H16
InAs-based Interband-Cascade-Lasers for emission around 6 um — •Matthias Dallner, Martin Kamp, and Sven Höfling — Technische Physik and Wilhelm-Conrad-Röntgen-Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany
Interband-cascade-lasers (ICLs) based on the GaSb material system are currently able to provide room-temperature continuous wave operation at wavelengths up to 5.6 µ m. One limitation of the performance at longer wavelengths is the requirement of thick cladding layers, which have a large thermal resistance if realized as superlattices. An alternative solution is the combination of established active region designs with plasmon enhanced waveguides on InAs substrates. The cladding layers of these devices are made out of highly doped InAs whose refractive index is significantly reduced due to the proximity of the emission wavelength to the plasmon resonance. This allows a combination of strong optical confinement and high thermal conductivity.
We’ll present data from InAs-based ICLs emitting around 6 um at room temperature that have been grown using molecular beam epitaxy. Various optimization concepts known from GaSb-based ICLs, like shortend injectors, split hole extractors or carrier rebalancing have been applied to our structures, yielding a considerable improvement in device performance. The latest devices show threshold current densities as low as 1.4 kA/cm2 at 20∘C under pulsed operation and a maximum operation temperature of 40∘C.