Regensburg 2013 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 32: Spintronics and magnetic semiconductors (MA, jointly with HL)
HL 32.7: Talk
Tuesday, March 12, 2013, 11:00–11:15, H3
Creep/recovery and 1/fα noise signatures of resistively switching manganites — •Jon-Olaf Krisponeit, Christin Kalkert, Bernd Damascke, Vasily Moshnyaga, and Konrad Samwer — I. Physikalisches Institut, Georg-August-Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen
Perovskite manganites show various interesting resistance effects, such as a metal-insulator transition driven by temperature as well as magnetic fields (colossal magnetoresistance). They also belong to a wide class of oxides which exhibit electrically induced resistive switching. Despite extensive efforts, the underlying mechanism of the switching effect, which possesses a high potential for applications, is still far from being understood.
We report the results on the dynamics of resistive switching on La0.8Ae0.2MnO3 (Ae=Ca, Sr thin film samples. By means of conductive atomic force microscopy (C-AFM) we studied the time evolution of nanoscaled metallic domains. Creep/recovery features show up in pulse-train experiments and current map sequences. Moreover, the current I(t) exhibits 1/fα noise signatures during the switching process. Such behavior is characteristic for various avalanche-type physical processes, like, for instance, the Barkhausen effect and martensitic transitions. Therefore, our results indicate the resistive switching effect to belong to this class of phenomena, and the dynamics to be governed by pinning and depinning of structural domain walls.
Financial support by DFG via SFB 602 and the Leibniz Program is acknowledged.